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MRF6S21140HR3 mrf6s21140hsr3 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for w--cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn--pcs/cellular radio and wll applications. ? typical 2--carrier w--cdma performance: v dd =28volts,i dq = 1200 ma, p out = 30 watts avg., f = 2112.5 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 15.5 db drain efficiency ? 27.5% im3 @ 10 mhz offset ? --37 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? --41 dbc in 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 140 watts cw output power features ? characterized with series equival ent large--signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? optimized for doherty applications ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +68 vdc gate--source voltage v gs --0.5, +12 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 140 w cw case temperature 75 c, 30 w cw r jc 0.35 0.38 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955/d, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf6s21140h rev. 5, 2/2010 freescale semiconductor technical data MRF6S21140HR3 mrf6s21140hsr3 2110--2170 mhz, 30 w avg., 28 v 2xw--cdma lateral n--channel rf power mosfets case 465c--02, style 1 ni--880s mrf6s21140hsr3 case 465b--03, style 1 ni--880 MRF6S21140HR3 ? freescale semiconductor, inc., 2004--2007, 2010. a ll rights reserved.
2 rf device data freescale semiconductor MRF6S21140HR3 mrf6s21140hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =68vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 300 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v dd =28vdc,i d = 1200 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain--source on--voltage (v gs =10vdc,i d =3adc) v ds(on) 0.1 0.21 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds =28vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1200 ma, p out =30wavg.,f1=2112.5mhz,f2= 2122.5 mhz, 2--carrier w--cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5mhz offset. im3 measured in 3.84 mhz channel bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 14.5 15.5 17.5 db drain efficiency d 26 27.5 ? % intermodulation distortion im3 ? -- 3 7 -- 3 5 dbc adjacent channel power ratio acpr ? -- 4 1 -- 3 8 dbc input return loss irl ? -- 1 5 -- 9 db 1. part is internally matched both on input and output.
MRF6S21140HR3 mrf6s21140hsr3 3 rf device data freescale semiconductor figure 1. MRF6S21140HR3(hsr3) test circuit schematic z8 0.531 x 1.000 microstrip z9 0.308 x 0.083 microstrip z10 0.987 x 0.083 microstrip z11, z12 0.070 x 0.220 microstrip z13 0.160 x 0.083 microstrip pcb taconic tlx8--0300, 0.030 , r =2.55 z1 0.250 x 0.083 microstrip z2 1.177 x 0.083 microstrip z3 0.443 x 0.083 microstrip z4 0.276 x 0.787 microstrip z5 0.786 x 0.083 microstrip (quarter wave length for bias purpose) z6, z7 0.833 x 0.083 microstrip (quarter wave length for supply purpose) c5 r2 v bias r1 z5 c4 c3 r3 rf input dut z1 c1 c19 z2 c2 z3 z4 c18 c6 c7 rf output c10 c12 c13 c16 z6 v supply z8 c17 z9 z10 z11 c8 c9 z12 z13 z7 c11 c14 c15 + table 5. MRF6S21140HR3(hsr3) test circuit component designations and values part description part number manufacturer c1, c3, c8, c9, c10, c11 6.8 pf chip capacitors atc100b6r8ct500xt atc c2 0.8 pf chip capacitor atc100b0r8bt500xt atc c4 220 nf chip capacitor vj1812y22ykxcat vishay c5, c12, c13, c14, c15 10 f chip capacitors c5750x5r1h106mt tdk c6, c19 0.2 pf chip capacitors atc100b0r2bt500xt atc c7 0.5 pf chip capacitor atc100b0r5bt500xt atc c16 220 f, 63 v electrolytic capacitor, radial emvy630atr221mke0s nippon chemi--con c17, c18 0.1 pf chip capacitors atc100b0r1bt500xt atc r1, r2 10 k , 1/4 w chip resistors crcw12061002fkta vishay r3 10 , 1/4 w chip resistor crcw120610r0fkta vishay
4 rf device data freescale semiconductor MRF6S21140HR3 mrf6s21140hsr3 figure 2. MRF6S21140HR3(hsr3) test circuit component layout c16 r2 v gs r1 c5 c4 c3 c1 r3 c19 c2 c10 v dd c12 c13 c17 c9 c8 c18 c6 c7 c14 c15 c11 cut out area mrf6s21140h rev 0
MRF6S21140HR3 mrf6s21140hsr3 5 rf device data freescale semiconductor typical characteristics irl, input return loss (db) im3 (dbc), acpr (dbc) -- 2 1 -- 1 2 -- 1 5 -- 1 8 g ps , power gain (db) g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) -- 2 1 -- 1 2 -- 1 5 -- 1 8 2220 2060 irl g ps acpr im3 f, frequency (mhz) figure 3. 2--carrier w--cdma broadband performance @ p out = 30 watts avg. 2200 2180 2160 2140 2120 2100 2080 15.6 15.5 -- 4 4 30 28 26 -- 3 2 -- 3 6 -- 4 0 2220 2060 irl g ps acpr im3 f, frequency (mhz) figure 4. 2--carrier w--cdma broadband performance @ p out = 60 watts avg. 2200 2180 2160 2140 2120 2100 2080 15 14.9 -- 3 3 42 40 38 -- 2 4 -- 2 7 -- 3 0 figure 5. two--tone power gain versus output power figure 6. third order intermodulation distortion versus output power 100 12 17 1 i dq = 1800 ma 1500 ma p out , output power (watts) pep 16 15 14 10 400 -- 5 5 -- 2 5 1 i dq = 600 ma p out , output power (watts) pep 1800 ma 100 -- 3 0 -- 3 5 -- 4 0 -- 4 5 -- 5 0 -- 6 0 v dd =28vdc f1 = 2135 mhz, f2 = 2145 mhz two--tone measurements, 10 mhz tone spacing 10 d , drain efficiency (%) d d d , drain efficiency (%) g ps , power gain (db) intermodulation d istortion (dbc) imd, third order 15.4 15.3 15.2 15.1 15 v dd =28vdc,p out =30w(avg.), i dq = 1200 ma, 2--carrier w--cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0. 01% probab ility ( ccdf) 14.8 14.7 14.6 14.5 14.4 v dd =28vdc,p out =60w(avg.), i dq = 1200 ma, 2--carrier w--cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 13 1200 ma 900 ma 600 ma v dd =28vdc f1 = 2135 mhz, f2 = 2145 mhz two--tone measurements, 10 mhz tone spacing -- 2 0 1500 ma 900 ma 1200 ma 400
6 rf device data freescale semiconductor MRF6S21140HR3 mrf6s21140hsr3 typical characteristics im3 (dbc), acpr (dbc) figure 7. intermodulation distortion products versus tone spacing 10 -- 6 0 -- 1 0 0.1 7th order two--tone spacing (mhz) v dd =28vdc,p out = 140 w (pep), i dq = 1200 ma two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz 5th order 3rd order -- 2 0 -- 3 0 -- 4 0 -- 5 0 1 100 figure 8. pulsed cw output power versus input power figure 9. 2--carrier w--cdma acpr, im3, power gain and drain efficiency versus output power 0--60 p out , output power (watts) avg. 35 -- 2 5 25 -- 3 0 20 -- 3 5 15 -- 4 0 5 -- 5 0 1 10 100 -- 4 5 10 v dd =28vdc,i dq = 1200 ma f1 = 2135 mhz, f2 = 2145 mhz 2--carrier w--cdma, 10 mhz carrier spacing. 3.84 mhz channel bandwidth. par = 8.5 db @ 0.01% pr obabilit y( ccdf) 44 58 p3db = 52.6 dbm (180 w) p in , input power (dbm) v dd =28vdc,i dq = 1200 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2140 mhz 56 54 52 50 48 36 34 40 38 42 actual ideal p1db = 52 dbm (158.5 w) 57 55 51 53 49 32 1000 12 18 1 0 60 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd =28vdc i dq = 1200 ma f = 2140 mhz t c =--30 _ c 25 _ c -- 3 0 _ c 100 10 17 16 15 14 13 50 40 30 20 10 figure 11. power gain versus output power p out , output power (watts) cw im3 g ps t c =--30 _ c 85 _ c d , drain efficiency (%), g ps , power gain (db) d , drain efficiency (%) imd, intermodulatio n distortion (dbc) p out , output power (dbm) d g ps g ps , power gain (db) g ps , power gain (db) v dd =24v 250 9 16 0 200 50 12 11 10 100 150 14 13 15 i dq = 1200 ma f = 2140 mhz 30 -- 5 5 d 25 _ c -- 3 0 _ c 85 _ c 25 _ c -- 3 0 _ c -- 3 0 _ c 25 _ c 85 _ c acpr 25 _ c 85 _ c 85 _ c 25 _ c 85 _ c 28 v 32 v
MRF6S21140HR3 mrf6s21140hsr3 7 rf device data freescale semiconductor typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd =28vdc,p out = 30 w avg., and d = 27.5%. mttf calculator available at http://www.freescale.com/rf. select tools/software/application software/calculators to access the mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 w--cdma test signal 10 0.0001 100 0 peak--to--average (db) figure 13. ccdf w--cdma 3gpp, test model 1, 64 dpch, 67% clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 figure 14. 2-carrier w-cdma spectrum f, frequency (mhz) 3.84 mhz channel bw -- i m 3 i n 3.84 mhz bw +im3 in 3.84 mhz bw --acpr in 3.84 mhz bw +acpr in 3.84 mhz bw probability (%) (db) +20 +30 0 -- 1 0 -- 4 0 -- 5 0 -- 6 0 -- 7 0 -- 8 0 -- 2 0 20 515 10 0 -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 2 5 -- 3 0 w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probabilit y on ccdf
8 rf device data freescale semiconductor MRF6S21140HR3 mrf6s21140hsr3 figure 15. series equivalent source and load impedance f mhz z source ? z load ? 2080 2110 2140 1.40 -- j3.03 1.34 -- j2.52 1.37 -- j2.78 7.53 -- j10.99 7.57 -- j10.67 7.58 -- j10.23 v dd =28vdc,i dq = 1200 ma, p out =30wavg. z o =25 ? z load * f = 2200 mhz f = 2080 mhz z source 2170 2200 1.31 -- j2.06 1.32 -- j2.28 7.51 -- j9.73 7.44 -- j9.32 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 2200 mhz f = 2080 mhz
MRF6S21140HR3 mrf6s21140hsr3 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor MRF6S21140HR3 mrf6s21140hsr3
MRF6S21140HR3 mrf6s21140hsr3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor MRF6S21140HR3 mrf6s21140hsr3
MRF6S21140HR3 mrf6s21140hsr3 13 rf device data freescale semiconductor product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 4 may 2007 ? removed lower thermal resistance and low gold plat ing bullets from features section as functionality is standard, p. 1 ? removed ?designed for lower memory effects and wide instantaneous bandwidth applications? bullet as functionality is standard, p. 1 ? added ?optimized for doherty applicati ons? bullet to features section, p. 1 ? removed total device dissipation from max rati ngs table as data was redundant (information already provided in thermal characteristics table), p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) and added ?measured in functional test?, on characteristics table, p. 2 ? removed forward transconductance from on charac teristics table as it no longer provided usable information, p. 2 ? updated part numbers in table 5, component desi gnations and values, to rohs compliant part numbers, p. 3 ? adjusted scale for fig. 5, two--tone power gain versus output power, to better match the device?s capabilities, p. 5 ? removed lower voltage tests from fig. 11, power gain versus output power, due to fixed tuned fixture limitations, p. 6 ? replaced fig. 12, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? added product documentation and revision history, p. 10 5 feb. 2010 ? modified data sheet to reflect rf test reduction de scribed in product and proc ess change notification number, pcn13232, p. 1, 2 ? added on characteristic v ds(on) min value, p. 2 ? added electromigration mttf calculator and rf high power model availability to product software, p. 13
14 rf device data freescale semiconductor MRF6S21140HR3 mrf6s21140hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004--2007, 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s21140h rev. 5, 2/2010

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